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ih-series reverseconductingigbtwithmonolithicbodydiode IHW20N135R3 datasheet industrial&multimarket
2 IHW20N135R3 ih-series rev.2.1,2011-05-03 reverseconductingigbtwithmonolithicbodydiode features: ?offersnewhigherbreakdownvoltageto1350vforimproved reliability ?powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly ?trenchstop tm technologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowv cesat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinv cesat ?lowemi ?qualifiedaccordingtojesd-022fortargetapplications ?pb-freeleadplating;rohscompliant ?halogenfree(accordingtoiec61249-2-21) ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?inductivecooking packagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IHW20N135R3 1350v 20a 1.6v 175c h20r1353 pg-to247-3 g c e g c e
3 IHW20N135R3 ih-series rev.2.1,2011-05-03 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 g c e g c e
4 IHW20N135R3 ih-series rev.2.1,2011-05-03 maximumratings parameter symbol value unit collector-emitter voltage v ce 1350 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 40.0 20.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 60.0 a turnoffsafeoperatingarea v ce 1350v, t vj 175c - 60.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 40.0 20.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 60.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 25 v powerdissipation t c =25c powerdissipation t c =100c p tot 310.0 155.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+175 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.48 k/w diode thermal resistance, junction - case r th(j-c) 0.48 k/w thermal resistance junction - ambient r th(j-a) 40 k/w g c e g c e
5 IHW20N135R3 ih-series rev.2.1,2011-05-03 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 1350 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =20.0a t vj =25c t vj =125c t vj =175c - - - 1.60 1.80 1.90 1.80 - - v diode forward voltage v f v ge =0v, i f =20.0a t vj =25c t vj =125c t vj =175c - - - 1.60 1.73 1.80 1.80 - - v gate-emitter threshold voltage v ge(th) i c =0.50ma, v ce = v ge 5.1 5.8 6.4 v zero gate voltage collector current i ces v ce =1350v, v ge =0v t vj =25c t vj =175c - - - - 100.0 2500.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =20.0a - 14.8 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 1500 - output capacitance c oes - 55 - reverse transfer capacitance c res - 45 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =1080v, i c =20.0a, v ge =15v - 195.0 - nc switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-off delay time t d(off) - 335 - ns fall time t f - 50 - ns turn-off energy e off - 1.30 - mj t vj =25c, v cc =600v, i c =20.0a, v ge =0.0/15.0v, r g =15.0 w , l s =175nh, c s =40pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
6 IHW20N135R3 ih-series rev.2.1,2011-05-03 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-off delay time t d(off) - 405 - ns fall time t f - 100 - ns turn-off energy e off - 2.25 - mj t vj =175c, v cc =600v, i c =20.0a, v ge =0.0/15.0v, r g =15.0 w , l s =175nh, c s =40pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
7 IHW20N135R3 ih-series rev.2.1,2011-05-03 figure 1. collectorcurrentasafunctionofswitching frequency ( t vj 175c, d =0.5, v ce =600v, v ge =15/0v, r g =15 w ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 10 20 30 40 50 60 70 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 5s 10s 50s 1ms 10ms dc figure 3. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 g c e g c e
8 IHW20N135R3 ih-series rev.2.1,2011-05-03 figure 5. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 10 20 30 40 50 60 v ge =20v 17v 15v 13v 11v 9v 7v figure 6. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 10 20 30 40 50 60 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 i c =10a i c =20a i c =40a g c e g c e
9 IHW20N135R3 ih-series rev.2.1,2011-05-03 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =15/0v, r g =15 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 10 20 30 40 10 100 1000 t d(off) t f figure 10. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =175c, v ce =600v, v ge =15/0v, i c =20a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 10 20 30 40 50 10 100 1000 t d(off) t f figure 11. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =600v, v ge =15/0v, i c =20a, r g =15 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 1000 t d(off) t f figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.5ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 2 3 4 5 6 7 8 typ. max. min. g c e g c e
10 IHW20N135R3 ih-series rev.2.1,2011-05-03 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =15/0v, r g =15 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 0 1 2 3 4 e off figure 14. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =175c, v ce =600v, v ge =15/0v, i c =20a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 10 20 30 40 50 0 1 2 3 4 e off figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =600v, v ge =15/0v, i c =20a, r g =15 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0 1 2 3 4 e off figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =175c, v ge =15/0v, i c =20a, r g =15 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 400 500 600 700 800 900 1000 1100 1200 0 1 2 3 4 e off g c e g c e
11 IHW20N135R3 ih-series rev.2.1,2011-05-03 figure 17. typicalturnoffswitchingenergylossfor softswitching (inductiveload, t vj =175c, v ge =15/0v, i c =20a, r g =15 w ,dynamictestcircuitin figure e) dv/dt ,voltageslope[v/s] e ,switchingenergylosses[mj] 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 i c =40a, t j =25c i c =40a, t j =175c figure 18. typicalgatecharge ( i c =20a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 0 2 4 6 8 10 12 14 16 270v 1080v figure 19. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 40 50 60 70 80 90 100 10 100 1000 c iss c oss c rss figure 20. igbttransientthermalresistance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 9.8e-3 2.8e-5 2 0.01407993 4.7e-5 3 0.0698 2.0e-4 4 0.1158 1.2e-3 5 0.1569 9.9e-3 6 0.1137 0.08835259 g c e g c e
12 IHW20N135R3 ih-series rev.2.1,2011-05-03 figure 21. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 9.8e-3 2.8e-5 2 0.0141 4.7e-5 3 0.0698 2.0e-4 4 0.1158 1.2e-3 5 0.1569 9.9e-3 6 0.1137 0.08835259 figure 22. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 t j =25c t j =175c figure 23. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 i c =10a i c =20a i c =40a g c e g c e
13 IHW20N135R3 ih-series rev.2.1,2011-05-03 g c e g c e pg-to247-3
14 IHW20N135R3 ih-series rev.2.1,2011-05-03 g c e g c e pg-to247-3 t a a b b
15 IHW20N135R3 ih-series rev.2.1,2011-05-03 revisionhistory IHW20N135R3 revision:2011-05-03,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 2011-05-03 final data sheet welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2013infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e g c e pg-to247-3 t a a b b

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